Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO3
Identifieur interne : 002C90 ( Main/Repository ); précédent : 002C89; suivant : 002C91Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO3
Auteurs : RBID : Pascal:11-0190401Descripteurs français
- Pascal (Inist)
- Addition nickel, Addition indium, Réaction état solide, Propriété électrique, XANES, Densité état, Joint grain, Défaut cristallin, Semiconducteur, Dopage, Etat localisé, Densité porteur charge, Conduction métallique, Bande conduction, Oxyde de lanthane, Oxyde de fer, Fer Lanthane Oxyde Mixte, Polycristal, Nickel, Hybridation, LaFeO3, Ferrite de lanthane, LaFe1-xNixO3, 6172W, 6172M.
- Wicri :
English descriptors
- KwdEn :
- Carrier density, Conduction bands, Crystal defects, Density of states, Doping, Electrical properties, Grain boundaries, Hybridization, Indium additions, Iron Lanthanum Oxides Mixed, Iron oxide, Lanthanum oxide, Localized states, Metallic conduction, Nickel, Nickel additions, Polycrystals, Semiconductor materials, Solid state reaction, XANES.
Abstract
Polycrystalline LaFe1-xNixO3 (x = 0.0, 0.1, 0.3 and 0.5) oxides are prepared by a solid-state reaction method. In order to explore the delocalization effects of disorder induced by Ni substitution, dependence of the ac electrical properties of the synthesized composition is investigated in a wide temperature (77-300 K) and frequency (1-10 MHz) range by impedance spectroscopy. Room temperature near-edge x-ray absorption fine structure experiment at O K edge is performed to probe the unoccupied density of states. Grain boundaries play a dominant role in determining the resistive properties of the series. These systems are semiconducting and the origin of their semiconducting nature changes with Ni doping. At low doping levels (x ≤ 0.3) the semiconducting nature is dominated by an increase in mobility of the localized charge carriers, which hop between their localized states. For x = 0.5, the semiconducting nature is determined by an increase in carrier density. These results are explained in terms of a metallic conduction band formed by the hybridization of O 2p and Ni 3d orbitals.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003333
Links to Exploration step
Pascal:11-0190401Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO<sub>3</sub></title><author><name sortKey="Idrees, M" uniqKey="Idrees M">M. Idrees</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>EMMG, Physics Division, PINSTECH, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical and Material Engineering, PIEAS, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name sortKey="Nadeem, M" uniqKey="Nadeem M">M. Nadeem</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>EMMG, Physics Division, PINSTECH, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Pohang Accelerator Laboratory, POSTECH</s1><s2>Pohang 790-784</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang 790-784</wicri:noRegion></affiliation></author><author><name sortKey="Mehmood, M" uniqKey="Mehmood M">M. Mehmood</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical and Material Engineering, PIEAS, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name sortKey="Atif, M" uniqKey="Atif M">M. Atif</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Solid State Physics, Technical University of Vienna, Wiedner Hauptstrasse 8-10</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>4 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1040 Vienna</wicri:noRegion></affiliation></author><author><name>KEUN HWA CHAE</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Pohang Accelerator Laboratory, POSTECH</s1><s2>Pohang 790-784</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang 790-784</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Nano Analysis Center, Korea Institute of Science and Technology</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Hassan, M M" uniqKey="Hassan M">M. M. Hassan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical and Material Engineering, PIEAS, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0190401</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0190401 INIST</idno><idno type="RBID">Pascal:11-0190401</idno><idno type="wicri:Area/Main/Corpus">003333</idno><idno type="wicri:Area/Main/Repository">002C90</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Conduction bands</term><term>Crystal defects</term><term>Density of states</term><term>Doping</term><term>Electrical properties</term><term>Grain boundaries</term><term>Hybridization</term><term>Indium additions</term><term>Iron Lanthanum Oxides Mixed</term><term>Iron oxide</term><term>Lanthanum oxide</term><term>Localized states</term><term>Metallic conduction</term><term>Nickel</term><term>Nickel additions</term><term>Polycrystals</term><term>Semiconductor materials</term><term>Solid state reaction</term><term>XANES</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition nickel</term><term>Addition indium</term><term>Réaction état solide</term><term>Propriété électrique</term><term>XANES</term><term>Densité état</term><term>Joint grain</term><term>Défaut cristallin</term><term>Semiconducteur</term><term>Dopage</term><term>Etat localisé</term><term>Densité porteur charge</term><term>Conduction métallique</term><term>Bande conduction</term><term>Oxyde de lanthane</term><term>Oxyde de fer</term><term>Fer Lanthane Oxyde Mixte</term><term>Polycristal</term><term>Nickel</term><term>Hybridation</term><term>LaFeO3</term><term>Ferrite de lanthane</term><term>LaFe1-xNixO3</term><term>6172W</term><term>6172M</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Polycrystalline LaFe<sub>1-x</sub>Ni<sub>x</sub>O<sub>3</sub> (x = 0.0, 0.1, 0.3 and 0.5) oxides are prepared by a solid-state reaction method. In order to explore the delocalization effects of disorder induced by Ni substitution, dependence of the ac electrical properties of the synthesized composition is investigated in a wide temperature (77-300 K) and frequency (1-10 MHz) range by impedance spectroscopy. Room temperature near-edge x-ray absorption fine structure experiment at O K edge is performed to probe the unoccupied density of states. Grain boundaries play a dominant role in determining the resistive properties of the series. These systems are semiconducting and the origin of their semiconducting nature changes with Ni doping. At low doping levels (x ≤ 0.3) the semiconducting nature is dominated by an increase in mobility of the localized charge carriers, which hop between their localized states. For x = 0.5, the semiconducting nature is determined by an increase in carrier density. These results are explained in terms of a metallic conduction band formed by the hybridization of O 2p and Ni 3d orbitals.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO<sub>3</sub></s1></fA08><fA11 i1="01" i2="1"><s1>IDREES (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>NADEEM (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>MEHMOOD (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>ATIF (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KEUN HWA CHAE</s1></fA11><fA11 i1="06" i2="1"><s1>HASSAN (M. M.)</s1></fA11><fA14 i1="01"><s1>EMMG, Physics Division, PINSTECH, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemical and Material Engineering, PIEAS, PO Nilore</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Pohang Accelerator Laboratory, POSTECH</s1><s2>Pohang 790-784</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Solid State Physics, Technical University of Vienna, Wiedner Hauptstrasse 8-10</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>Nano Analysis Center, Korea Institute of Science and Technology</s1><s2>Seoul 136-791</s2><s3>KOR</s3><sZ>5 aut.</sZ></fA14><fA20><s2>105401.1-105401.12</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000194435980140</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>36 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0190401</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Polycrystalline LaFe<sub>1-x</sub>Ni<sub>x</sub>O<sub>3</sub> (x = 0.0, 0.1, 0.3 and 0.5) oxides are prepared by a solid-state reaction method. In order to explore the delocalization effects of disorder induced by Ni substitution, dependence of the ac electrical properties of the synthesized composition is investigated in a wide temperature (77-300 K) and frequency (1-10 MHz) range by impedance spectroscopy. Room temperature near-edge x-ray absorption fine structure experiment at O K edge is performed to probe the unoccupied density of states. Grain boundaries play a dominant role in determining the resistive properties of the series. These systems are semiconducting and the origin of their semiconducting nature changes with Ni doping. At low doping levels (x ≤ 0.3) the semiconducting nature is dominated by an increase in mobility of the localized charge carriers, which hop between their localized states. For x = 0.5, the semiconducting nature is determined by an increase in carrier density. These results are explained in terms of a metallic conduction band formed by the hybridization of O 2p and Ni 3d orbitals.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A72M</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A72W</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition nickel</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Nickel additions</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition indium</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium additions</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Réaction état solide</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solid state reaction</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Reacción estado sólido</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Electrical properties</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>XANES</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XANES</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Densité état</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Density of states</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Densidad estado</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Joint grain</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Grain boundaries</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Défaut cristallin</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Crystal defects</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Dopage</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Doping</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Doping</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etat localisé</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Localized states</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Carrier density</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Conduction métallique</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Metallic conduction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Conducción metálica</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Bande conduction</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Conduction bands</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de lanthane</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Lanthanum oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Lantano óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde de fer</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Iron oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Hierro óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Fer Lanthane Oxyde Mixte</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Iron Lanthanum Oxides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Polycristal</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Polycrystals</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Hybridation</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Hybridization</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>LaFeO3</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Ferrite de lanthane</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>LaFe1-xNixO3</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6172W</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6172M</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>122</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002C90 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 002C90 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:11-0190401
|texte= Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO3
}}
| This area was generated with Dilib version V0.5.77. |  |